Houghton, Michigan – Memristors are a new class of electrical circuits—and they could end the silicon era and change electronics forever. Since HP first developed a working prototype with a titanium dioxide film in 2008, engineers have sought to perfect the model.
Now, researchers at Michigan Technological University have made an ideal memristor based on molybdenum disulfide nanosheets. Yun Hang Hu, the Charles and Carroll McArthur Professor of Materials Science and Engineering, led the research, which was recently published in Nano Letters.
Check out the full story on mtu.edu/news and enjoy a blast from the past photo. The attached image is of a Memorex 667 disk drive (200 mb capacity, 25 min seek time, 75 pounds) and is a good reminder of how far computing has come along. The relic enjoys a small shrine in the computer science department kitchen.
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